FET,MOSFET 阵列

结果:
6,290
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power - Max
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Configuration
Operating Temperature
FET Type
FET Feature
Power Dissipation (Max)
Drive Voltage (Max Rds On, Min Rds On)
Technology
Vgs (Max)
Mounting Type
Qualification
Voltage - Supply
Logic Voltage - VIL, VIH
Rise / Fall Time (Typ)
Channel Type
Driven Configuration
Grade
Current - Peak Output (Source, Sink)
Input Type
Number of Drivers
Voltage - Rated
Gate Type
High Side Voltage - Max (Bootstrap)
Gain
Current Rating (Amps)
Noise Figure
Number of Outputs
Voltage - Test
Voltage - Supply Span (Max)
Program Memory Type
Gain Bandwidth Product
Current - Input Bias
EEPROM Size
Voltage - Input (Min)
Amplifier Type
Voltage - Isolation
Current - Test
Topology
Current - Supply
Oscillator Type
Voltage - Supply Span (Min)
Core Size
Connectivity
Program Memory Size
Data Converters
Current
Current - Output / Channel
Core Processor
Output Type
Voltage - Input (Max)
Current - Output
Output Configuration
Power - Output
Function
Frequency - Switching
Voltage
Voltage - Output
Voltage - Output (Min/Fixed)
Voltage - Supply (Vcc/Vdd)
Voltage - Input
Speed
Synchronous Rectifier
Applications
RAM Size
-3db Bandwidth
Number of I/O
Slew Rate
Peripherals
Voltage - Output (Max)
Voltage - Input Offset
Type
Frequency
Number of Circuits
结果6,290
选择
图片产品详情单价可用性ECAD 模型SeriesMounting TypeOperating TemperaturePackage / CaseSupplier Device PackagePower - MaxTechnologyFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsQualificationGradeConfiguration
DMN63D8LDWQ-7
MOSFET 2N-CH 30V 0.22A SOT363
联系我们
237,853 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
6-TSSOP, SC-88, SOT-363
SOT-363
300mW
MOSFET (Metal Oxide)
-
30V
220mA
2.8Ohm @ 250mA, 10V
1.5V @ 250µA
0.87nC @ 10V
22pF @ 25V
AEC-Q101
Automotive
2 N-Channel (Dual)
AO6604
联系我们
233,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
SC-74, SOT-457
6-TSOP
1.1W
MOSFET (Metal Oxide)
Logic Level Gate, 4.5V Drive
20V
3.4A, 2.5A
65mOhm @ 3.4A, 4.5V
1V @ 250µA
3.8nC @ 4.5V
320pF @ 10V
-
-
N and P-Channel Complementary
NTJD5121NT1G
MOSFET 2N-CH 60V 295MA SOT363
联系我们
230,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
250mW
MOSFET (Metal Oxide)
Logic Level Gate
60V
295mA
1.6Ohm @ 500mA, 10V
2.5V @ 250µA
0.9nC @ 4.5V
26pF @ 20V
-
-
2 N-Channel (Dual)
BSS138BKS,115
MOSFET 2N-CH 60V 0.32A 6TSSOP
联系我们
225,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
TrenchMOS™
Surface Mount
-55°C ~ 150°C (TJ)
6-TSSOP, SC-88, SOT-363
6-TSSOP
445mW
MOSFET (Metal Oxide)
Logic Level Gate
60V
320mA
1.6Ohm @ 320mA, 10V
1.6V @ 250µA
0.7nC @ 4.5V
56pF @ 10V
AEC-Q101
Automotive
2 N-Channel (Dual)
DMC2400UV-7
MOSFET N/P-CH 20V SOT563
联系我们
223,127 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
SOT-563, SOT-666
SOT-563
450mW
MOSFET (Metal Oxide)
Logic Level Gate
20V
1.03A, 700mA
480mOhm @ 200mA, 5V
900mV @ 250µA
0.5nC @ 4.5V
37.1pF @ 10V
-
-
N and P-Channel
NVJD5121NT1G
MOSFET 2N-CH 60V 0.295A SC88
联系我们
219,500 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
250mW
MOSFET (Metal Oxide)
-
60V
295mA
1.6Ohm @ 500mA, 10V
2.5V @ 250µA
0.9nC @ 4.5V
26pF @ 20V
AEC-Q101
Automotive
2 N-Channel (Dual)
DMN63D8LDW-7
MOSFET 2N-CH 30V 0.22A SOT363
联系我们
213,526 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
6-TSSOP, SC-88, SOT-363
SOT-363
300mW
MOSFET (Metal Oxide)
Logic Level Gate
30V
220mA
2.8Ohm @ 250mA, 10V
1.5V @ 250µA
0.87nC @ 10V
22pF @ 25V
-
-
2 N-Channel (Dual)
BSS8402DW-7-F
MOSFET N/P-CH 60V/50V SC70-6
联系我们
204,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
6-TSSOP, SC-88, SOT-363
SOT-363
200mW
MOSFET (Metal Oxide)
Logic Level Gate
60V, 50V
115mA, 130mA
7.5Ohm @ 50mA, 5V
2.5V @ 250µA
-
50pF @ 25V, 45pF @ 25V
-
-
N and P-Channel
DMN5L06VAK-7
MOSFET 2N-CH 50V 0.28A SOT-563
联系我们
195,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
SOT-563, SOT-666
SOT-563
250mW
MOSFET (Metal Oxide)
Logic Level Gate
50V
280mA
2Ohm @ 50mA, 5V
1V @ 250µA
-
50pF @ 25V
-
-
2 N-Channel (Dual)
SI5513CDC-T1-GE3
MOSFET N/P-CH 20V 4A 1206-8
联系我们
194,960 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
TrenchFET®
Surface Mount
-55°C ~ 150°C (TJ)
8-SMD, Flat Lead
1206-8 ChipFET™
3.1W
MOSFET (Metal Oxide)
Logic Level Gate
20V
4A, 3.7A
55mOhm @ 4.4A, 4.5V
1.5V @ 250µA
4.2nC @ 5V
285pF @ 10V
-
-
N and P-Channel
US6J11TR
MOSFET 2P-CH 12V 1.3A TUMT6
联系我们
192,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
150°C (TJ)
6-SMD, Flat Leads
TUMT6
320mW
MOSFET (Metal Oxide)
Logic Level Gate
12V
1.3A
260mOhm @ 1.3A, 4.5V
1V @ 1mA
2.4nC @ 4.5V
290pF @ 6V
-
-
2 P-Channel (Dual)
DMN6040SSDQ-13
MOSFET N-CH 60V 5.0A SO-8
联系我们
187,775 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SO
1.3W
MOSFET (Metal Oxide)
-
60V
5A (Ta)
40mOhm @ 4.5A, 10V
3V @ 250µA
22.4nC @ 10V
1287pF @ 25V
AEC-Q101
Automotive
2 N-Channel (Dual)
SI1965DH-T1-GE3
MOSFET 2P-CH 12V 1.3A SC70-6
联系我们
180,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
TrenchFET®
Surface Mount
-55°C ~ 150°C (TJ)
6-TSSOP, SC-88, SOT-363
SC-70-6
1.25W
MOSFET (Metal Oxide)
Logic Level Gate
12V
1.3A
390mOhm @ 1A, 4.5V
1V @ 250µA
4.2nC @ 8V
120pF @ 6V
-
-
2 P-Channel (Dual)
DMN4026SSD-13
MOSFET 2N-CH 40V 7A 8SO
联系我们
179,196 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SO
1.3W
MOSFET (Metal Oxide)
Logic Level Gate
40V
7A
24mOhm @ 6A, 10V
3V @ 250µA
19.1nC @ 10V
1060pF @ 20V
-
-
2 N-Channel (Dual)
BSC150N03LDGATMA1
MOSFET 2N-CH 30V 8A 8TDSON
联系我们
169,063 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
OptiMOS™
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerVDFN
PG-TDSON-8-4
26W
MOSFET (Metal Oxide)
Logic Level Gate
30V
8A
15mOhm @ 20A, 10V
2.2V @ 250µA
13.2nC @ 10V
1100pF @ 15V
-
-
2 N-Channel (Dual)
DMN2004DWK-7
MOSFET 2N-CH 20V 0.54A SOT-363
联系我们
168,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-65°C ~ 150°C (TJ)
6-TSSOP, SC-88, SOT-363
SOT-363
200mW
MOSFET (Metal Oxide)
Logic Level Gate
20V
540mA
550mOhm @ 540mA, 4.5V
1V @ 250µA
-
150pF @ 16V
-
-
2 N-Channel (Dual)
BUK9K17-60EX
MOSFET 2N-CH 60V 26A 56LFPAK
联系我们
165,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 175°C (TJ)
SOT-1205, 8-LFPAK56
LFPAK56D
53W
MOSFET (Metal Oxide)
Logic Level Gate
60V
26A
15.6mOhm @ 10A, 10V
2.1V @ 1mA
16.5nC @ 5V
2223pF @ 25V
AEC-Q100
Automotive
2 N-Channel (Dual)
NTLJD3115PT1G
MOSFET 2P-CH 20V 2.3A 6-WDFN
联系我们
158,950 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
6-WDFN Exposed Pad
6-WDFN (2x2)
710mW
MOSFET (Metal Oxide)
Logic Level Gate
20V
2.3A
100mOhm @ 2A, 4.5V
1V @ 250µA
6.2nC @ 4.5V
531pF @ 10V
-
-
2 P-Channel (Dual)
DMC2710UDW-7
MOSFET BVDSS: 8V-24V SOT363
联系我们
155,500 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
6-TSSOP, SC-88, SOT-363
SOT-363
290mW (Ta)
MOSFET (Metal Oxide)
-
20V
750mA (Ta), 600mA (Ta)
450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
1V @ 250µA
0.6nC @ 4.5V, 0.7nC @ 4.5V
42pF @ 16V, 49pF @ 16V
-
-
N and P-Channel Complementary
DMN2008LFU-7
MOSFET 2N-CHA 20V 14.5A DFN2030
联系我们
149,400 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
6-UFDFN Exposed Pad
U-DFN2030-6 (Type B)
1W
MOSFET (Metal Oxide)
-
20V
14.5A
5.4mOhm @ 5.5A, 4.5V
1.5V @ 250A
42.3nC @ 10V
1418pF @ 10V
-
-
2 N-Channel (Dual) Common Drain

关于  FET,MOSFET 阵列

场效应晶体管(FET)是利用电场调节电流流动的电子器件。通过对栅极施加电压,可以改变漏极和源极之间的电导率。与双极晶体管不同,FET是单极性晶体管,意味着它们依赖于一种类型的载流子来进行操作。这可以是电子或空穴,但不能同时存在。 FET的一个关键优势是其在低频下具有很高的输入阻抗。这个特性源于FET的栅极端子不会吸引任何电流,因为它被设计成以电压驱动模式工作。因此,与类似配置的双极晶体管相比,FET的输入阻抗可以高出几个数量级。 场效应晶体管有多种类型,最常见的是结型场效应晶体管(JFET)和金属氧化物半导体场效应晶体管(MOSFET)。JFET利用反向偏置的pn结来控制电流流动,而MOSFET使用氧化层来隔离栅极和通道区域。 FET在电子领域有许多应用,包括放大器、开关、振荡器和电压稳压器。由于其具有高输入阻抗,FET经常用于低功耗电路中,其中低负载效应和信号质量是关键考虑因素。 总而言之,场效应晶体管(FET)是利用电场控制电流流动的电子器件。它们是单极性晶体管,依靠一种类型的载流子进行操作。FET在低频下具有高输入阻抗,非常适合在低功耗应用中使用,其中信号质量是关键因素。